型号:

FQB27P06TM

RoHS:无铅 / 符合
制造商:Fairchild Semiconductor描述:MOSFET P-CH 60V 27A D2PAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
FQB27P06TM PDF
产品目录绘图 D2PAK, TO-263AB Pkg
标准包装 1
系列 QFET™
FET 型 MOSFET P 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 27A
开态Rds(最大)@ Id, Vgs @ 25° C 70 毫欧 @ 13.5A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 43nC @ 10V
输入电容 (Ciss) @ Vds 1400pF @ 25V
功率 - 最大 3.75W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 D²PAK
包装 标准包装
产品目录页面 1607 (CN2011-ZH PDF)
其它名称 FQB27P06TMDKR
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